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| Zowie Technology Corporation Switching Transistor NPN Silicon 3 BASE 1 2 2 EMITTER COLLECTOR 3 MMBT4401 1 SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBT4401=2X ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC=0.1 mAdc, IE=0 ) Emitter-Base Breakdowe Voltage ( IE=0.1 mAdc, IC=0 ) Base Cutoff Current ( VCE=35 Vdc, VEB=0.4 Vdc ) Collector Cutoff Current ( VCE=35 Vdc, VEB=0.4 Vdc ) (3) V(BR)CEO 40 - Vdc V(BR)CBO 60 - Vdc V(BR)EBO 6.0 - Vdc IBEV - 0.1 nAdc ICEX - 0.1 nAdc REV. : 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS(3) DC Current Gain ( IC=0.1 mAdc, VCE=1.0 Vdc ) ( IC=1.0 mAdc, VCE=1.0 Vdc ) ( IC=10 mAdc, VCE=1.0 Vdc ) ( IC=150 mAdc, VCE=1.0 Vdc ) ( IC=500 mAdc, VCE=2.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) Base-Emitter Saturation Voltage ( IC=150 mAdc, IB=15 mAdc ) ( IC=500 mAdc, IB=50 mAdc ) (3) (3) HFE 20 40 80 100 40 300 - - VCE(sat) - 0.4 0.75 Vdc VBE(sat) 0.75 - 0.95 1.2 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB=5.0 Vdc, IE=0, f=1.0 MHZ ) Emitter-Base Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) fT 250 MHZ Ccb - 6.5 pF Ceb - 30 pF hie 1.0 15 k ohms hre 0.1 8.0 X 10 -4 hfe 40 500 - hoe 1.0 30 u mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ( VCC=30 Vdc, VBE=2.0 Vdc, IC=150 mAdc, IB1=15 mAdc ) ( VCC=30 Vdc, IC=150 mAdc, IB1=IB2=15 mAdc ) td tr ts tf 15 20 225 30 nS nS (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%. REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V 1.0 to 100 us, DUTY CYCLE = 2% 1.0 k 0 -2.0 V < 2.0 ns Scope rise time < 4.0 ns * Total shunt capacitance of test jig and connectors 0 CS* < 10 pF* -14 V < 20 ns 200 +16 V 1.0 to 100 us, DUTY CYCLE = 2% 1.0 k +30 V 200 +16 V CS* < 10 pF* -4.0V Figure 1. Turn-On Time Figure 2. Turn-Off Time TRANSIENT CHARACTERISTICS 30 20 10 7.0 VCC=30 V IC/IB=10 CAPACITANCE ( pF ) 5.0 Q, CHARGE (pC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 TJ=25 C TJ=100 C o o QT 3.0 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 QA 20 30 50 70 100 200 300 500 REVERSE BIAS VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 3. Capacitance Figure 4. Charge Data REV. : 0 Zowie Technology Corporation Zowie Technology Corporation TRANSIENT CHARACTERISTICS 100 70 50 IC/IB=10 MMBT4401 100 70 50 tr @ VCC=30V tr @ VCC=10V tb @ VEB=2.0V td @ VEB=0V tr tr VCC=30 V IC/IB=10 t, TIME ( ns ) t, TIME ( ns ) 200 300 500 30 20 30 20 10 7.0 5.0 10 20 30 50 70 100 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time 300 tS4 = tS - 1/8tf IB1 = IB2 IC/IB = 10 to 20 Figure 6. Rise and Fall Times 100 70 VCC=30 V IB1=IB2 t's, STORAGE TIME ( ns ) 200 tf, FALL TIME ( ns ) 50 IC/IB=20 30 IC/IB=10 100 70 50 20 10 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE=10 Vdc, TA=25 C Bandwidth=1.0HZ o Figure 8. Fall Time 10 10 NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 8.0 IC=1.0mA, RS=150 IC=500uA, RS=200 IC=100uA, RS=2.0k IC=50uA, RS=4.0k RS=OPTIMUM SOURCE RESISTANCE f = 1.0 kHz 8.0 6.0 6.0 IC=50uA IC=100uA IC=500uA IC=1.0mA 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k10 k 20 k 50 k100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE ( OHMS ) Figure 9.Frquency Effects Figure 10.Source Resistance Effects REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT4401 h PARAMETERS o VCE = 10 Vdc, f = 1.0 kHZ, TA = 25 C This group of graphs illustrates the relationship between hfe and and other " h " parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were 300 50k selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hie, INPUT IMPEDANCE (OHMS) 200 hfe, CURRENT GAIN 20k 10k 5.0k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 100 70 50 2.0k 1.0k 500 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain Figure 12. Input Impedance hre, VOLTAGE FEEDBACK RATIO (X 10 ) -4 10 7.0 5.0 3.0 2.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 100 hoe, OUTPUT ADMITTANCE(umhos) 50 MMBT4401LT1 UNIT 1 20 10 5.0 MMBT4401LT1 UNIT 2 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBT4401 STATIC CHARACTERISTICS 3.0 hFE, NORMALIZED CURRENT GAIN 2.0 VCE=1.0V VCE=10V TJ=125 C o 1.0 0.7 0.5 TJ=25 C o TJ= -55 C o 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT ( mA ) Figure 15. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ= 25 C o 0.8 IC = 1.0mA IC = 10mA IC = 100mA IC = 500mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT ( mA ) Figure 16. Collector Saturation Region 1.0 TJ= 25 C VBE(SAT) @ IC/IB = 10 o +0.5 0 0.8 VC for VCE(sat) VOLTAGE ( VOLTS ) COEFFICIENTS (mV / C) o -0.5 -1.0 0.6 VBE @ VCE = 10 V 0.4 -1.5 VB for 0.2 VCE(SAT) @ IC/IB = 10 -2.0 VBE 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage Figure 18. Temperature Coefficients REV. : 0 Zowie Technology Corporation |
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